Rigorous modeling approach to numerical simulation of SiGe HBTs
نویسندگان
چکیده
We present results of fully two-dimensional numerical simulations of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) in comparison with experimental data. Among the critical modeling issues discussed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown in Si. # 2003 Elsevier B.V. All rights reserved. PACS: 85.30.Pq; 85.30.De
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